SiR578DP - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Gen V power MOSFET.
Very low RDS x Qg figure-of-merit (FOM).
Tuned for the lowest RDS x Qoss FOM.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

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Datasheet Details

Part number	SiR578DP
Manufacturer	Vishay
File Size	236.94 KB
Description	N-Channel MOSFET
Datasheet	SiR578DP Datasheet
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www.vishay.com SiR578DP Vishay Siliconix N-Channel 150 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 150 0.0088 0.010 24.5 70.2 Single FEATURES • TrenchFET® Gen V power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Dec 8, 2024 |