* RDS(ON) ≤ 0.22Ω @ VGS=10V, ID=14A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET
* O.

The UTC 28N50-CB is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the av.

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