28N50F fda28n50f equivalent, fda28n50f.
* RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A
* Low Gate Charge ( Typ. 80nC)
* Low Crss ( Typ. 38pF)
* Fast Switching
* 100% Avalanche Tested
* .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switchi.
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