28N15 fqa28n15 equivalent, fqa28n15.
This N-Channel enhancement mode power MOSFET is
* 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar stri.
* 175°C Maximum Junction Temperature Rating
D
G DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise .
Features
This N-Channel enhancement mode power MOSFET is
* 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
ID = 16.5 A
technology .
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