28NM50N Datasheet, STMicroelectronics

Order codes STB28NM50N STF28NM50N STP28NM50N STW28NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.158 Ω ID 21 A
* 100% avalanche tested
* Low input capacitance an.

* Switching applications Description These devices are N-channel Power MOSFETs developed using the second generatio.

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and .