28NM60ND datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND
* Intrinsic fast-recovery body diode
* 100% .

Application

* Switching applications Description These FDmesh™ II Power MOSFETs with 6 intrinsic fast-recovery body diode.

Description

These FDmesh™ II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremel.

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