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TQP13-N - 0.13 um D pHEMT Foundry Service

General Description

TriQuint's TQP13-N process is a unique, low-cost 150mm wafer, optical lithography 0.13um pHEMT process used for low noise and medium power applications in Ku-band through V-band applications.

Key Features

  • 0.13 um pHEMT (TQP13-N) Process Cross-section.
  • Low cost Optical Lithography 0.13um Gate High Ft, ~95 GHz TQP13-N Low Noise, < 0.5 dB in Ku-band Interconnects: 2 layers (1 Airbridge & 1 local) High Value MIM Capacitor Resistors.
  • Thin film resistor.
  • Epi resistor 0.13 um pHEMT Device Cross-Section.
  • Backside Vias High Volume 150 mm Wafers Same Baseline as Mass Production Today General Desc.

📥 Download Datasheet

Datasheet Details

Part number TQP13-N
Manufacturer TriQuint Semiconductor
File Size 196.61 KB
Description 0.13 um D pHEMT Foundry Service
Datasheet download datasheet TQP13-N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production Process 0.13 um D pHEMT Foundry Service Features 0.13 um pHEMT (TQP13-N) Process Cross-section • • • • • • Low cost Optical Lithography 0.13um Gate High Ft, ~95 GHz TQP13-N Low Noise, < 0.5 dB in Ku-band Interconnects: 2 layers (1 Airbridge & 1 local) High Value MIM Capacitor Resistors • Thin film resistor • Epi resistor 0.13 um pHEMT Device Cross-Section • • • Backside Vias High Volume 150 mm Wafers Same Baseline as Mass Production Today General Description TriQuint's TQP13-N process is a unique, low-cost 150mm wafer, optical lithography 0.13um pHEMT process used for low noise and medium power applications in Ku-band through V-band applications. The process features a highly repeatable 0.