Datasheet Details
| Part number | TQP200002 |
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| Manufacturer | TriQuint Semiconductor |
| File Size | 789.38 KB |
| Description | ESD Protection Circuit |
| Datasheet |
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The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications.
It delivers bidirectional protection with very low leakage currents and extremely low capacitance.
| Part number | TQP200002 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 789.38 KB |
| Description | ESD Protection Circuit |
| Datasheet |
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| Part Number | Description |
|---|---|
| TQP2420B | ISM Band InGaP HBT Power Amplifier |
| TQP2420G | ISM Band InGaP HBT Power Amplifier |
| TQP0102 | GaN Power Transistor |
| TQP0103 | GaN Power Transistor |
| TQP0104 | GaN Power Transistor |
| TQP13-N | 0.13 um D pHEMT Foundry Service |
| TQP15 | 0.15 um D-mode pHEMT Foundry Service |
| TQP369180 | DC-6 GHz Gain Block |
| TQP369181 | DC-6 GHz Gain Block |
| TQP369182 | DC-6 GHz Gain Block |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.