Datasheet Details
| Part number | TQP0104 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 378.92 KB |
| Description | GaN Power Transistor |
| Datasheet |
 TQP0104 Datasheet
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General Description
The TQP0104 is a wide band over-molded QFN discrete GaN power amplifier.
The device is a single stage unmatched power amplifier transistor.
The TQP0104 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems.
Key Features
- Operating Frequency Range: DC to 4 GHz.
- Output Power (PSAT): 30 W.
- Drain Efficiency: 64%.
- Linear Gain: 17 dB.
- Package Dimensions: 3 x 4 x 0.85 mm TQP0104 30 W, DC to 4 GHz, GaN Power Transistor 20 Pin 3x4mm QFN Functional Block Diagram VG, RF In 1 VG, RF In 2 VG, RF In 3 VG, RF In 4 VG, RF In 5 VG, RF In 6 20 19 18 17 16 VD, RF Out 15 VD, RF Out 14 VD, RF Out 13 VD, RF Out 12 VD, RF Out 11 VD, RF Out 7 8 9 10 N/C N/C N/C N/C N/C N/C N/C N/C Gen.