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TQP0103 - GaN Power Transistor

General Description

The TQP0103 is a wide band over-molded QFN discrete power amplifier.

The device is a single stage unmatched power amplifier transistor.

The TQP0103 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems.

Key Features

  • Operating Frequency Range: DC to 4 GHz.
  • Output Power (PSAT): 15 W.
  • Drain Efficiency: 64%.
  • Linear Gain: 19 dB.
  • Package Dimensions: 3 x 4 x 0.85 mm TQP0103 15 W, DC to 4 GHz, GaN Power Transistor 20 Pin 3x4mm QFN Functional Block Diagram General.

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Datasheet Details

Part number TQP0103
Manufacturer TriQuint Semiconductor
File Size 438.76 KB
Description GaN Power Transistor
Datasheet download datasheet TQP0103 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  W-CDMA / LTE  Macrocell Base Station Driver  Microcell Base Station  Small Cell  Active Antenna  General Purpose Applications Product Features  Operating Frequency Range: DC to 4 GHz  Output Power (PSAT): 15 W  Drain Efficiency: 64%  Linear Gain: 19 dB  Package Dimensions: 3 x 4 x 0.85 mm TQP0103 15 W, DC to 4 GHz, GaN Power Transistor 20 Pin 3x4mm QFN Functional Block Diagram General Description The TQP0103 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0103 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems.