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TQP0102 - GaN Power Transistor

General Description

The TQP0102 is a wide band over-molded QFN discrete GaN power amplifier.

The device is a single stage unmatched power amplifier transistor.

The TQP0102 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell applications.

Key Features

  • Operating Frequency Range: DC to 4 GHz.
  • Output Power (PSAT): 5 W.
  • Drain Efficiency: 68%.
  • Linear Gain: 19 dB.
  • Package Dimensions: 3 x 3 x 0.85 mm 16 Pin 3x3mm QFN Functional Block Diagram N/C 1 VG, RF In 2 N/C 3 N/C 4 16 15 14 13 12 N/C 11 VD, RF Out 10 VD, RF Out 9 N/C 5678 General.

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Datasheet Details

Part number TQP0102
Manufacturer TriQuint Semiconductor
File Size 369.56 KB
Description GaN Power Transistor
Datasheet download datasheet TQP0102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications • Small Cell Base Station • Microcell Base Station Driver • Active Antenna • General Purpose Applications TQP0102 5 W, DC to 4 GHz, GaN Power Transistor N/C N/C N/C N/C N/C N/C N/C N/C Product Features • Operating Frequency Range: DC to 4 GHz • Output Power (PSAT): 5 W • Drain Efficiency: 68% • Linear Gain: 19 dB • Package Dimensions: 3 x 3 x 0.85 mm 16 Pin 3x3mm QFN Functional Block Diagram N/C 1 VG, RF In 2 N/C 3 N/C 4 16 15 14 13 12 N/C 11 VD, RF Out 10 VD, RF Out 9 N/C 5678 General Description The TQP0102 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0102 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell applications.