SSM5H16TU Datasheet | Toshiba

Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode DC-DC Converter Applications - - - 1.8-V drive bined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) t = 10s Tch Rating 30 ± 12 1.9 3.8 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C UFV JEDEC ― ― 2-2R1A Schottky Barrier Diode (Ta = 25°C) Characteristics Reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VR IO IFSM Tj Rating 30 0.8 6 (50Hz) 125 Unit V A A °C JEITA TOSHIBA Weight: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating - 55 to 125 Unit °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2) Marking 5 4 Equivalent Circuit (top view) 5 4 KE3 2009-11-20 MOSFET Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain- source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain...