SSM5H06FE Datasheet (Toshiba Semiconductor) - Silicon Epitaxial Schottky Barrier Diode

SSM5H06FE, Silicon Epitaxial Schottky Barrier Diode

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Combined Nch MOSFET and Schottky Diode in one Package.

Small package Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 Absolute Maximum Ratings (Ta = 25°C) MOSFET 1.6±0.05 1.0±0.05 0.5 Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Rating 20 ±10 100 200 150 15

SSM5H06FE Features

* ol combustions or explos