SSM5H11TU Datasheet - Toshiba Semiconductor

SSM5H11TU, Silicon Epitaxial Schottky Barrier Diode

SSM5H11TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter

Features

* S.
* Product is intended for use in general

Applications

* 4.0-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel t

SSM5H11TU-ToshibaSemiconductor.pdf