SSM5H14F Datasheet - Toshiba Semiconductor

SSM5H14F, Silicon Epitaxial Schottky Barrier Diode

SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut

Features

* or incorporated into any products or systems whose manufacture, use, or sale is prohibited un

Applications

* of the battery pack
* 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channe

SSM5H14F-ToshibaSemiconductor.pdf