SSM5H12TU Datasheet - Toshiba Semiconductor

SSM5H12TU, Silicon Epitaxial Schottky Barrier Diode

SSM5H12TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter

Features

* mation contained in this document, or in charts, diagrams, programs, algorithms, s

Applications

* 1.8-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note

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