･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 6.0dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTORTION IM3= -45dB.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts