The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
MICROWAVE POWER GaAs FET
TIM1011-2L
HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 G1dB VDS= 9V 6.5 Two Tone Test P=22dBm
(Single Carrier Level)
SYMBOL P1dB
CONDITION
MIN. TYP. MAX. UNIT 32.5 33.5 7.5 0.85 24 -45 0.85 1.1 1.1 80 dBm dB A % dBc A °C
f =10.7-11.
TIM1011-2L Datasheet
