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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN
G1dB= 9.5dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTOTION
IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1112-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB IDS1
VDS= 10V IDSset= 1.0A f=11.7 to 12.7 GHz
UNIT dBm dB
A
Gain Flatness
G
dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 24.
TIM1112-4UL Datasheet
