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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-8L
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1
( Ta= 25°C )
UNIT dBm dB A % dBc A °C MIN. 38.5 5.0 ⎯ ⎯ -42 ⎯ ⎯ TYP. MAX. 39.5 ⎯ 6.0 3.4 22 -45 3.4 ⎯ ⎯ 4.4 ⎯ ⎯ 4.4 80
CONDITIONS
VDS= 9V f= 10.7 to 11.
TIM1011-8L Datasheet
