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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-4L
TECHNICAL DATA FEATURES
HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ΔG
( Ta= 25°C )
UNIT dBm dB A dB % dBc A °C MIN. 35.5 6.5 ⎯ ⎯ ⎯ -42 ⎯ ⎯ TYP. MAX. 36.5 ⎯ 7.5 1.7 ⎯ 24 -45 1.7 ⎯ ⎯ 2.2 ±0.8 ⎯ ⎯ 2.2 70
CONDITIONS
VDS= 9V f= 10.7 to 11.7GHz
ηadd
IM3 IDS2 ΔTch Two-Tone Test Po=25.
TIM1011-4L Datasheet
