TH58NYG3S0HBAI4 datasheet, e2prom equivalent, Toshiba

Features and benefits

* Organization Memory cell array Register Page size Block size x8 4352  128K  8  2 4352  8 4352 bytes (256K  16K) bytes
* Modes Read, Reset, Auto Page Prog.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TH58NYG3S0HBAI4 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks. The device has two 4352-byte static registers which a.

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