TH58NVG3D4BTG00 - 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM

Product Overview

Toshiba

Datasheet Details

Part number	TH58NVG3D4BTG00
Manufacturer	Toshiba
File Size	306.07 KB
Description	8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM
Datasheet	TH58NVG3D4BTG00 Datasheet
Additional preview pages of the TH58NVG3D4BTG00 datasheet.

Product details

Description

The TH58NVG3D4B is a single 3.3 V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 4096blocks.The device has a 2112-byte static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 2112 bytes × 128 pages).The TH58NVG3D4B is a serial-typ

Features

Organization Memory cell array Register Page size Block size TH58NVG3D4B 2112 × 256K × 8 × 2 2112 × 8 2112 bytes (256K + 8K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read.
Mode control Serial input/output Command control.
Number of valid blocks Max 4096 blocks Min 3936 blocks.
Power supply VCC = 2.7 V to 3.6 V.
Program/Erase Cycles 10000 Cycles (With 4bit/528Byte ECC).
Access time Cell array to r.

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Published: Aug 4, 2015 |