The TH58BVG2S3HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 64) bytes 64 pages 4096 blocks.
| Part number | TH58BVG2S3HBAI4 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 690.29 KB |
| Description | 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| Datasheet |
 TH58BVG2S3HBAI4 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| TH58100FT | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | Toshiba Semiconductor |
| TH58100FTI | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | Toshiba Semiconductor |
| TH58NVG1S3AFT05 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | Toshiba Semiconductor |
| TH58NVG4S0FTA20 | 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM | Toshiba Semiconductor |
| TH58NVG5S0FTA20 | 32-GBIT (4G x 8 BIT) CMOS NAND E2PROM | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| TH58BVG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HBAI6 | 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HTA00 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HTAI0 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BYG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
