TH58BVG3S0HBAI6 - 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

Product Overview

Toshiba

Datasheet Details

Part number	TH58BVG3S0HBAI6
Manufacturer	Toshiba
File Size	697.68 KB
Description	8G-BIT (1G x 8 BIT) CMOS NAND E2PROM
Datasheet	TH58BVG3S0HBAI6 Datasheet
Additional preview pages of the TH58BVG3S0HBAI6 datasheet.

Product details

Description

The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.

Features

Organization x8 Memory cell array 4224 × 128K × 8 × 2 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 4016 blocks Max 4096 blocks.
Power supply VCC = 2.7V to 3.6V.
Access time Cell.

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Published: Feb 16, 2017 |