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TC58NVG2S3ETA00 Datasheet, Toshiba

TC58NVG2S3ETA00 e2prom equivalent, 4 gbit (512m x 8 bit) cmos nand e2prom.

TC58NVG2S3ETA00 Avg. rating / M : 1.0 rating-13

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TC58NVG2S3ETA00 Datasheet

Features and benefits


* Organization Memory cell array Register Page size Block size
* x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, A.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow .

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TAGS

TC58NVG2S3ETA00
GBIT
512M
BIT
CMOS
NAND
E2PROM
TC58NVG2S3ETAI0
TC58NVG2S3EBAI5
TC58NVG2S0FBAI4
Toshiba

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