logo

TC58NVG2S3EBAI5 Datasheet, Toshiba

TC58NVG2S3EBAI5 e2prom equivalent, 4 gbit (512m x 8-bit) cmos nand e2prom.

TC58NVG2S3EBAI5 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 651.96KB)

TC58NVG2S3EBAI5 Datasheet
TC58NVG2S3EBAI5 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 651.96KB)

TC58NVG2S3EBAI5 Datasheet

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  64) bytes  64 pages  4096blocks. The device has two 2112-byte static registers which allow .

Image gallery

TC58NVG2S3EBAI5 Page 1 TC58NVG2S3EBAI5 Page 2 TC58NVG2S3EBAI5 Page 3

TAGS

TC58NVG2S3EBAI5
GBIT
512M
8-BIT
CMOS
NAND
E2PROM
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

Related datasheet

TC58NVG2S3ETA00

TC58NVG2S3ETAI0

TC58NVG2S0FBAI4

TC58NVG2S0FTA00

TC58NVG2S0FTAI0

TC58NVG2S0HBAI4

TC58NVG2S0HBAI6

TC58NVG2S0HTA00

TC58NVG2S0HTAI0

TC58NVG2D4BFT00

TC58NVG0S3AFT00

TC58NVG0S3AFT05

TC58NVG0S3ETA00

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts