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TC58NVG2S0HBAI6 Datasheet, Toshiba

TC58NVG2S0HBAI6 e2prom equivalent, 4g-bit (512m x 8 bit) cmos nand e2prom.

TC58NVG2S0HBAI6 Avg. rating / M : 1.0 rating-11

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TC58NVG2S0HBAI6 Datasheet

Features and benefits


* Organization x8 Memory cell array 4352 × 128K × 8 Register 4352 × 8 Page size 4352 bytes Block size (256K + 16K) bytes
* Modes Read, Reset, Auto Page .

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NVG2S0HBAI6 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which a.

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TAGS

TC58NVG2S0HBAI6
4G-BIT
512M
BIT
CMOS
NAND
E2PROM
Toshiba

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