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TC58NVG2S0FTAI0 - 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM

Description

The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.

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Other Datasheets by Toshiba

Part Number Description
TC58NVG2S0FTA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S0FBAI4 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
TC58NVG2S0HBAI4 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S0HBAI6 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S0HTA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Full PDF Text Transcription (Reference)

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TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks. The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14 Kbytes: 4320 bytes × 64 pages). The TC58NVG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
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