logo

TC58NVG2S0HBAI4 Datasheet, Toshiba

TC58NVG2S0HBAI4 e2prom equivalent, 4 gbit (512m x 8 bit) cmos nand e2prom.

TC58NVG2S0HBAI4 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 479.09KB)

TC58NVG2S0HBAI4 Datasheet
TC58NVG2S0HBAI4 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 479.09KB)

TC58NVG2S0HBAI4 Datasheet

Features and benefits


* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes
* Modes Read, Reset, Auto Page Program,.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NVG2S0HBAI4 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which a.

Image gallery

TC58NVG2S0HBAI4 Page 1 TC58NVG2S0HBAI4 Page 2 TC58NVG2S0HBAI4 Page 3

TAGS

TC58NVG2S0HBAI4
GBIT
512M
BIT
CMOS
NAND
E2PROM
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

Related datasheet

TC58NVG2S0HBAI6

TC58NVG2S0HTA00

TC58NVG2S0HTAI0

TC58NVG2S0FBAI4

TC58NVG2S0FTA00

TC58NVG2S0FTAI0

TC58NVG2S3EBAI5

TC58NVG2S3ETA00

TC58NVG2S3ETAI0

TC58NVG2D4BFT00

TC58NVG0S3AFT00

TC58NVG0S3AFT05

TC58NVG0S3ETA00

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts