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SSM3J358R - Silicon P-Channel MOSFET

Key Features

  • (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 V) RDS(ON) = 25.3 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 22.1 mΩ (max) (@VGS = -8 V) 3. Packaging and Pin Assignment SOT-23F SSM3J358R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-11 2017-01-24 Rev.2.0 SSM3J358R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 2.

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Datasheet Details

Part number SSM3J358R
Manufacturer Toshiba
File Size 373.53 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J358R Datasheet

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MOSFETs Silicon P-Channel MOS SSM3J358R 1. Applications • Power Management Switches 2. Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 V) RDS(ON) = 25.3 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 22.1 mΩ (max) (@VGS = -8 V) 3. Packaging and Pin Assignment SOT-23F SSM3J358R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-11 2017-01-24 Rev.2.0 SSM3J358R 4.