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SSM3J358R Datasheet, Toshiba

SSM3J358R mosfet equivalent, silicon p-channel mosfet.

SSM3J358R Avg. rating / M : 1.0 rating-11

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SSM3J358R Datasheet

Features and benefits

(1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 .

Application


* Power Management Switches 2. Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 49.3 mΩ (max).

Image gallery

SSM3J358R Page 1 SSM3J358R Page 2 SSM3J358R Page 3

TAGS

SSM3J358R
Silicon
P-Channel
MOSFET
Toshiba

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