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SSM3J355R - Silicon P-Channel MOSFET

Key Features

  • (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ. ) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ. ) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ. ) (VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J355R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-11 2025-02-20 Rev.4.0 SSM3J355R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating.

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Datasheet Details

Part number SSM3J355R
Manufacturer Toshiba
File Size 436.92 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J355R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS SSM3J355R 1. Applications • Power Management Switches 2. Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J355R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-11 2025-02-20 Rev.4.0 SSM3J355R 4.