SSM3J358R
Features
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 V) RDS(ON) = 25.3 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 22.1 mΩ (max) (@VGS = -8 V)
3. Packaging and Pin Assignment
SOT-23F
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2016-11
2017-01-24 Rev.2.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -20 V
Gate-source voltage
VGSS
±10
Drain current Drain current (pulsed)
(Note 1) (Note 1), (Note 2)
ID IDP
-6 A -20
Power dissipation
(Note 3)
1W
Power dissipation t ≤ 10s
(Note 3)
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy...
