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SSM3J352F - Silicon P-Channel MOSFET

Key Features

  • (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 443 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 110 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment S-Mini SSM3J352F 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2016-12-19 Rev.2.0 SSM3J352F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol.

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Datasheet Details

Part number SSM3J352F
Manufacturer Toshiba
File Size 340.95 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J352F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J352F 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 443 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 110 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment S-Mini SSM3J352F 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2016-12-19 Rev.2.0 SSM3J352F 4.