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SSM3J338R - Silicon P-Channel MOSFET

Key Features

  • (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ. ) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ. ) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ. ) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2025-02-20 Rev.3.0 SSM3J338R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics.

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Datasheet Details

Part number SSM3J338R
Manufacturer Toshiba
File Size 423.72 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J338R Datasheet

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MOSFETs Silicon P-Channel MOS SSM3J338R 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2025-02-20 Rev.3.0 SSM3J338R 4.