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SSM3J338R Datasheet, Toshiba

SSM3J338R mosfet equivalent, silicon p-channel mosfet.

SSM3J338R Avg. rating / M : 1.0 rating-12

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SSM3J338R Datasheet

Features and benefits

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (ty.

Application


* Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) =.

Image gallery

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TAGS

SSM3J338R
Silicon
P-Channel
MOSFET
SSM3J331R
SSM3J332R
SSM3J334R
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

Related datasheet

SSM3J338R

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