SSF2814E datasheet, mosfet equivalent, Silikron Semiconductor

Features and benefits

* VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating：2000V HBM
* High Power and cu.

Application

that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.

Description

The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2814E GENERAL FEATURES
* VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON.

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