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HYB39S16160CT-10 Datasheet, Siemens Semiconductor

HYB39S16160CT-10 dram equivalent, 16 mbit synchronous dram.

HYB39S16160CT-10 Avg. rating / M : 1.0 rating-13

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HYB39S16160CT-10 Datasheet

Features and benefits

eration Definition All of SDRAM operations are defined by states of control signals CS, RAS, .

Application


* Fully Synchronous to Positive Clock Edge
* 0 to 70 °C operating temperature
* Dual Banks controlled by A1.

Description

Pin Names CLK CKE CS RAS CAS WE A0 - A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select DQ DQM, LDQM, UDQM Data Input /Output Data Mask Power (+ 3.3 V) Ground Power for .

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HYB39S16160CT-10 Page 1 HYB39S16160CT-10 Page 2 HYB39S16160CT-10 Page 3

TAGS

HYB39S16160CT-10
MBit
Synchronous
DRAM
Siemens Semiconductor

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