HYB39S16160AT-10 Datasheet, Siemens Semiconductor

cation flexibility, a CAS latency, a burst length, and a burst sequence can be progr.

VDD VSS VDDQ VSSQ NC Semiconductor Group 2 1998-10-01 HYB 39S16400/800/160AT-8/-10 www.DataSheet4U.com 16 MBit Synchronous DRAM VDD DQ0 VSSQ DQ1 VDDQ DQ2 VSSQ DQ3 VDDQ N.C. N.C. WE CAS RAS CS A11 A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 .

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HYB39S16160CT-10

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HYB39S16160CT-8

HYB39S16320TQ-6

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