HYB39S16160CT-6
HYB39S16160CT-6 is 1M x 16 MBit Synchronous DRAM manufactured by Siemens Semiconductor Group.
Description
LVTTL-version:
HYB 39S16160CT-6 HYB 39S16160CT-7 P-TSOPII-50 (400mil) P-TSOPII-50 (400mil) 166MHz 2B x 512k x 16 SDRAM 143MHz 2B x 512k x 16 SDRAM
Pin Description and Pinouts:
CLK CKE CS RAS CAS WE A0-A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select DQ LDQM, UDQM Vdd Vss Vddq Vssq NC Data Input /Output Data Mask Power (+3.3V) Ground Power for DQ’s (+ 3.3V) Ground for DQ’s not connected
Pin-Out
Vdd DQ0 DQ1 Vssq DQ2 DQ3 Vddq DQ4 DQ5 Vssq DQ6 DQ7 Vddq LDQM WE CAS RAS CS A11 A10 A0 A1 A2 A3 Vdd
1 2 3 4 5 6 7 8...
