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HYB39S16160CT-6 - 1M x 16 MBit Synchronous DRAM

General Description

LVTTL-version: HYB 39S16160CT-6 HYB 39S16160CT-7 P-TSOPII-50 (400mil) P-TSOPII-50 (400mil) 166MHz 2B x 512k x 16 SDRAM 143MHz 2B x 512k x 16 SDRAM Pin Description and Pinouts: CLK CKE CS RAS CAS WE A0-A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write

Key Features

  • ck, a RAS cycle starts. According to address data, a word line of the selected bank is activated and all of sense amplifiers associated to the word line a.

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Full PDF Text Transcription for HYB39S16160CT-6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYB39S16160CT-6. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: -6 fCKmax @ CL=3 tCK...

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h Speed Graphics Applications • High Performance: -6 fCKmax @ CL=3 tCK3 tAC3 fCKmax @ CL=2 tCK2 tAC2 166 6 5 125 8 6 -7 143 7 5.5 115 9 6 Units MHz ns ns MHz ns ns • • • • • • • • full page(optional) for sequencial wrap around Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge Data Mask for Read / Write control Dual Data Mask for byte control ( x16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode 4096 refresh cycles / 64 ms Latency 2 @ 125 MHz Latency 3 @ 166 MHz Random Column Address every CLK ( 1-N Rule) Single 3.3V +/- 0.

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