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HYB39S16160CT-7 - 1M x 16 MBit Synchronous DRAM

Download the HYB39S16160CT-7 datasheet PDF. This datasheet also covers the HYB39S16160CT-6 variant, as both devices belong to the same 1m x 16 mbit synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

LVTTL-version: HYB 39S16160CT-6 HYB 39S16160CT-7 P-TSOPII-50 (400mil) P-TSOPII-50 (400mil) 166MHz 2B x 512k x 16 SDRAM 143MHz 2B x 512k x 16 SDRAM Pin Description and Pinouts: CLK CKE CS RAS CAS WE A0-A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write

Features

  • ck, a RAS cycle starts. According to address data, a word line of the selected bank is activated and all of sense amplifiers associated to the word line a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYB39S16160CT-6_SiemensSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
HYB39S128160CT 128-MBit Synchronous DRAM Infineon Technologies
HYB39S128160CTL 128-MBit Synchronous DRAM Infineon Technologies
HYB39S128160FE 128-MBit Synchronous DRAM Qimonda
HYB39S128160FEL 128-MBit Synchronous DRAM Qimonda
HYB39S128160FT 128-MBit Synchronous DRAM Qimonda

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB39S16160CT-10 16 MBit Synchronous DRAM
HYB39S16160CT-6 1M x 16 MBit Synchronous DRAM
HYB39S16160CT-8 16 MBit Synchronous DRAM
HYB39S16160AT-10 16 MBit Synchronous DRAM
HYB39S16160AT-8 16 MBit Synchronous DRAM

Full PDF Text Transcription

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www.DataSheet4U.com HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: -6 fCKmax @ CL=3 tCK3 tAC3 fCKmax @ CL=2 tCK2 tAC2 166 6 5 125 8 6 -7 143 7 5.5 115 9 6 Units MHz ns ns MHz ns ns • • • • • • • • full page(optional) for sequencial wrap around Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge Data Mask for Read / Write control Dual Data Mask for byte control ( x16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode 4096 refresh cycles / 64 ms Latency 2 @ 125 MHz Latency 3 @ 166 MHz Random Column Address every CLK ( 1-N Rule) Single 3.3V +/- 0.
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