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SPRD6560-C - Power MOSFET

Description

The SPRD6560-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SPRD6560-C
Manufacturer SeCoS
File Size 751.31 KB
Description Power MOSFET
Datasheet download datasheet SPRD6560-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SPRD6560-C -Ch: 23A, 60V, RDS(O ) 45mΩ P-Ch: -19A, -60V, RDS(O ) 82mΩ & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD6560-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD6560-C meet the RoHS and Green Product requirement with full function reliability approved.
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