SPRD4560-C Datasheet PDF - SeCoS Dual N-Channel MOSFET Specs

SPRD4560-C - Dual N-Channel MOSFET

Datasheet Summary

Description

The SPRD4560-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

Datasheet Details

Part number	SPRD4560-C
Manufacturer	SeCoS
File Size	416.10 KB
Description	Dual N-Channel MOSFET
Datasheet	SPRD4560-C Datasheet
Additional preview pages of the SPRD4560-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SPRD4560-C 24A, 60V, RDS(O ) 45mΩ Dual -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD4560-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4560-C meet the RoHS and Green Product requirement with full function reliability approved. DFN5x6-8D FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4560 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.

Published: May 19, 2020 |