SPRD4160-C Datasheet PDF - SeCoS Dual N-Ch Enhancement Mode Power MOSFET Specs

SPRD4160-C - Dual N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

Datasheet Details

Part number	SPRD4160-C
Manufacturer	SeCoS
File Size	540.80 KB
Description	Dual N-Ch Enhancement Mode Power MOSFET
Datasheet	SPRD4160-C Datasheet
Additional preview pages of the SPRD4160-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SPRD4160-C 42A, 60V, RDS(ON) 12mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4160-C meet the RoHS and Green Product requirement with full function reliability approved. DFN5x6-8D FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4160 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.

Published: May 28, 2024 |