SPRD4511-C Datasheet PDF - SeCoS N & P-Ch Enhancement Mode Power MOSFET Specs

SPRD4511-C - N & P-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SPRD4511-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

Datasheet Details

Part number	SPRD4511-C
Manufacturer	SeCoS
File Size	643.82 KB
Description	N & P-Ch Enhancement Mode Power MOSFET
Datasheet	SPRD4511-C Datasheet
Additional preview pages of the SPRD4511-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SPRD4511-C -Ch: 11A, 100V, RDS(O ) 150mΩ P-Ch: -9A, -100V, RDS(O ) 210mΩ & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD4511-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4511-C meet the RoHS and Green Product requirement with full function reliability approved. DFN5x6-8D FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4511 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.7 5.8 5.9 6.

Published: May 28, 2024 |