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SPRD4503-C - N & P-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SPRD4503-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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Datasheet preview – SPRD4503-C

Datasheet Details

Part number SPRD4503-C
Manufacturer SeCoS
File Size 448.78 KB
Description N & P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SPRD4503-C Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente SPRD4503-C -Ch: 28A, 30V, RDS(O ) 18mΩ P-Ch: -22A, -30V, RDS(O ) 30mΩ & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD4503-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4503-C meet the RoHS and Green Product requirement with full function reliability approved. DFN5x6-8D FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4503 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.7 5.8 5.9 6.1 4.8 5 3.
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