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SMS8820 - N-CHANNEL MOSFET

General Description

SMS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It is ESD-protected.

This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

Key Features

  • Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS8820 7A , 20V , RDS(ON) 21 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SMS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD-protected. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 8820 SOT-23 A L 3 Top View CB 1 1 2 K E D F G H 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC.