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SMS2301Y-C - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SMS2301Y-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

  • Advanced High Cell Density Trench Technology Super low Gate Charge Green Device Available.

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Datasheet preview – SMS2301Y-C

Datasheet Details

Part number SMS2301Y-C
Manufacturer SeCoS
File Size 368.45 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SMS2301Y-C Datasheet
Additional preview pages of the SMS2301Y-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMS2301Y-C -3.4A , -20V, RDS(ON) 64mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS2301Y-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2301Y-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super low Gate Charge Green Device Available MARKING S1.
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