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SMS123Y-C - N-Channel MOSFET

Datasheet Summary

Description

The SMS123Y-C is N-Channel Enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

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Datasheet preview – SMS123Y-C

Datasheet Details

Part number SMS123Y-C
Manufacturer SeCoS
File Size 389.62 KB
Description N-Channel MOSFET
Datasheet download datasheet SMS123Y-C Datasheet
Additional preview pages of the SMS123Y-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMS123Y-C 0.2A, 100V, RDS(ON) 5Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS123Y-C is N-Channel Enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Excellent on Resistance Extremely Low Threshold Voltage APPLICATION DC-DC Converter Circuit Load Switch Power MOSFET Gate Drivers MARKING B123.
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