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SMS123 - N-Channel MOSFET

Datasheet Summary

Description

The SMS123 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

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Datasheet preview – SMS123

Datasheet Details

Part number SMS123
Manufacturer SeCoS
File Size 150.04 KB
Description N-Channel MOSFET
Datasheet download datasheet SMS123 Datasheet
Additional preview pages of the SMS123 datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMS123 0.17A, 100V, RDS(ON) 6Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS123 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING B123 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.
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