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SMS2012-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SMS2012-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet preview – SMS2012-C

Datasheet Details

Part number SMS2012-C
Manufacturer SeCoS
File Size 602.89 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SMS2012-C Datasheet
Additional preview pages of the SMS2012-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMS2012-C 6A, 20V, RDS(ON) 26mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS2012-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2012-C meet the RoHS and Green Product Requirement with full function reliability approved.
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